View DMN2004K10_5063411.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DMN2004K
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
V(BR)DSS RDS(ON) 0.55 @ VGS = 4.5V 20V 0.9 @ VGS = 1.8V 410mA ID TA = 25C 630mA
Features and Benefits
* * * * * * * * * Low On-Resistance: RDS(ON) = 550(max)m @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected up to 2KV Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. * * DC-DC Converters Power management functions
Mechanical Data
* * * * * * Case: SOT-23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (approximate)
Drain
SOT-23
Gate
D
Gate Protection Diode
G
Source
S
ESD PROTECTED TO 2kV
Top View
Equivalent Circuit
Top View
Ordering Information (Note 3)
Part Number DMN2004K-7
Notes:
Case SOT-23
Packaging 3000/Tape & Reel
1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
NAB
NAB = Product Type Marking Code YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September)
Date Code Key Year Code Month Code
2006 T Jan 1 Feb 2
2007 U Mar 3 Apr 4
YW
2008 V
2009 W Jun 6 Jul 7
2010 X Aug 8 Sep 9
2011 Y Oct O Nov N
2012 Z Dec D
May 5
DMN2004K
Document number: DS30938 Rev. 5 - 2
1 of 6 www.diodes.com
November 2010
(c) Diodes Incorporated
DMN2004K
Maximum Ratings @TA = 25C unless otherwise specified
Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 4) VGS = 4.5V Drain Current (Note 4) VGS = 1.8V Pulsed Drain Current (Note 5) Steady State Steady State TA = 25C TA = 85C TA = 25C TA = 85C Symbol VDSS VGSS ID ID IDM Value 20 8 630 450 410 300 1.5 Units V V mA mA A
Thermal Characteristics @TA = 25C unless otherwise specified
Characteristic Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Symbol PD RJA TJ, TSTG Value 350 357 -65 to +150 Units mW C/W C
Electrical Characteristics @TA = 25C unless otherwise specified
Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Source Current Diode Forward Voltage (Note 6) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
Notes:
Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| IS VSD Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr
Min 20 0.5 200 0.6
Typ 0.4 0.5 0.7 292 0.9 0.2 0.2 5.7 8.4 59.4 37.6 5.5 0.85
Max 1 1 1.0 0.55 0.70 0.9 0.5 1 150 25 20
Unit V A A V ms A V pF pF pF nC
Test Condition VGS = 0V, ID = 10A VDS = 16V, VGS = 0V VGS = 4.5V, VDS = 0V VDS = VGS, ID = 250A VGS = 4.5V, ID = 540mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VDS =10V, ID = 0.2A VGS = 0V, IS = 500mA VDS = 16V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VDS = 15V, VGS = 4.5V, ID = 0.5A
ns
VGS = 8V, VDS = 15V, RG = 6, RL = 30 IS = 0.5A, dI/dt = -100A/s IS = 0.5A, dI/dt = -100A/s
ns nC
4. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided. 5. Pulse width 10S, Duty Cycle 1%. 6. Short duration pulse test used to minimize self-heating effect.
DMN2004K
Document number: DS30938 Rev. 5 - 2
2 of 6 www.diodes.com
November 2010
(c) Diodes Incorporated
DMN2004K
ID, DRAIN CURRENT (A) 0 0
1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics
5
VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Reverse Drain Current vs. Source-Drain Voltage
1
RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE ()
0.5
0.1
Tch, CHANNEL TEMPERATURE (C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature
VGS = 5V Pulsed
ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
TA = 150C
TA = 125C
TA = 85C
TA = -55 C T A = 25 C T A = 0 C TA = -25 C
RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE () (NORMALIZED)
RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE ()
6
ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
DMN2004K
Document number: DS30938 Rev. 5 - 2
3 of 6 www.diodes.com
November 2010
(c) Diodes Incorporated
DMN2004K
RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE () (NORMALIZED)
RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE ()
ID, DRAIN CURRENT (A) Fig. 7 On-Resistance vs. Drain Current and Gate Voltage
IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA)
Tj, JUNCTION TEMPERATURE (C) Fig. 8 Static Drain-Source, On-Resistance vs. Temperature
|Yfs|, FORWARD TRANSFER ADMITTANCE (S)
1,000 ID, DRAIN CURRENT (mA) Fig. 11 Forward Transfer Admittance vs. Drain Current
IDR, REVERSE DRAIN CURRENT (A)
VDS, DRAIN SOURCE VOLTAGE (V) Fig. 12 Capacitance Variation
DMN2004K
Document number: DS30938 Rev. 5 - 2
4 of 6 www.diodes.com
November 2010
(c) Diodes Incorporated
DMN2004K
1
10 VGS, GATE-SOURCE VOLTAGE (V)
IS, SOURCE CURRENT (A)
8
0.1
TA = 25C
6
VDS = 15V ID = 0.5A
4
0.01
2
0.001 0
0
0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 13 Diode Forward Voltage vs. Current
0
0.5 1 1.5 2 2.5 Qg, TOTAL GATE CHARGE (nC) Fig. 14 Gate-Charge Characteristics
3
Package Outline Dimensions
A
BC
H K D J F G L M
K1
SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm
Suggested Pad Layout
Y Z
C
Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35
X
E
DMN2004K
Document number: DS30938 Rev. 5 - 2
5 of 6 www.diodes.com
November 2010
(c) Diodes Incorporated
DMN2004K
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2010, Diodes Incorporated www.diodes.com
DMN2004K
Document number: DS30938 Rev. 5 - 2
6 of 6 www.diodes.com
November 2010
(c) Diodes Incorporated

▲Up To Search▲

Price & Availability of DMN2004K10

	To Download DMN2004K10 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .